SUD15N06-90l
v ds (v) r ds(on) ( ) i d (a) 60 0.065 @ v gs = 10 v 15 60 0.090 @ v gs = 4.5 v 14 to-252 s gd top view drain connected to tab order number: SUD15N06-90l d g s n-channel mosfet
parameter symbol limit unit gate-source voltage v gs 20 v continuous drain current ( t j = 175 c ) t c = 25 c i d 15 a continuous drain current (t j = 175 c) t c = 100 c i d 12 a pulsed drain current i dm 30 a continuous source current (diode conduction) i s 15 avalanche current i ar 15 repetitive avalanche energy (duty cycle 1%) l = 0.1 mh e ar 11 mj maximum power dissipation t c = 25 c p d 37 w maximum power dissipation t a = 25 c p d 2 a w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol typical maximum unit junction-to-ambient free air, fr4 board mount a r thja 60 70 c/w junction-to-case r thjc 3.7 4.0 c/w notes: a. 1.36 x 2.1 surface mounted on 1o x 1o fr4 board. n-channel 60 v (d-s) 175 c mosfet www.freescale.net.cn 1 / 4
parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 2.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zgvl dic i v ds = 60 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v, t j = 125 c 50 a v ds = 60 v, v gs = 0 v, t j = 175 c 150 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 15 a dis os r i b v gs = 10 v, i d = 10 a 0.050 0.065 drain source on state resistance b r ds( ) v gs = 10 v, i d = 10 a, t j = 125 c 0.12 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 10 a, t j = 175 c 0.15 v gs = 4.5 v, i d = 5 a 0.065 0.090 forward transconductance b g fs v ds = 15 v, i d = 10 a 11 s dynamic input capacitance c iss v 0 v v 25 v f 1 mh 524 f output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 98 pf reverse transfer capacitance c rss 28 total gate charge c q g v30vv10vi15a 12 20 c gate-source charge c q gs v ds = 30 v, v gs = 10 v, i d = 15 a 2 nc gate-drain charge c q gd 3.5 turn-on delay time c t d(on) v30vr2 7 20 rise time c t r v dd = 30 v, r l = 2 i15av10vr25 8 25 ns turn-off delay time c t d(off) dd , l i d 15 a, v gen = 10 v, r g = 2.5 15 40 ns fall time c t f 7 20 source-drain diode ratings and characteristics (t c = 25 c) pulsed current i sm 30 a diode forward voltage v sd i f = 15 a, v gs = 0 v 0.9 1.2 v reverse recovery time t rr i f = 15 a, di/dt = 100 a/ s 29 60 ns notes: a. for design aid only; not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. www.freescale.net.cn 2 / 4 SUD15N06-90l n-channel 60 v (d-s) 175 c mosfet
output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) on-resistance ( q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) r ds(on) ) v gs transconductance (s) g fs 0 10 20 30 40 50 0246810 0 4 8 12 16 20 0 4 8 12 16 20 24 0 5 10 15 20 25 0 4 8 12 16 20 0 0.02 0.04 0.06 0.08 0.10 0 4 8 12 16 20 0 4 8 12 16 20 012345 25 c 55 c t c = 125 c v ds = 30 v i d = 15 a v gs = 10 thru 6 v v gs = 4.5 v c rss t c = 55 c 25 c 125 c 3 v 4 v 5 v v gs = 10 v 0 200 400 600 800 1000 0 102030405060 c iss c oss i d drain current (a) www.freescale.net.cn 3 / 4 SUD15N06-90l n-channel 60 v (d-s) 175 c mosfet
0 0.3 0.6 0.9 1.2 on-resistance vs. junction temperature source-drain diode forward voltage (normalized) on-resistance ( t j junction temperature ( c) v sd source-to-drain voltage (v) r ds(on) ) source current (a) i s 0 0.5 1.0 1.5 2.0 2.5 50 25 0 25 50 75 100 125 150 175 100 10 1 v gs = 10 v i d = 10 a t j = 25 c t j = 150 c
drain current vs. case temperature normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 normalized effective transient thermal impedance 3 safe operating area t c case temperature ( c) v ds drain-to-source voltage (v) drain current (a) i d drain current (a) i d 50 10 0.1 0 4 8 12 16 20 0 25 50 75 100 125 150 175 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.1 1 10 100 1 1 t c = 25 c single pulse 1 ms 10 ms 100 ms dc 100 s 10 s limited by r ds(on) www.freescale.net.cn 4 / 4 SUD15N06-90l n-channel 60 v (d-s) 175 c mosfet
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